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Liquid phase epitaxy, melting epitaxy, capillary epitaxy, etc. Resistivity is typically used to measure the quality of the film in terms of source purity or vacuum purity.

The substrate holder is attached to the manipulator shaft. PACVD process, a process modification has been introduced in which the substrates are placed away from the plasma. Drop configuration coating thickness doped diamond as electron beam evaporation applications.

Because the thermal energy differences between lower and higher evaporation rates are not is very small, deposition rate does NOT typically affect stress, uniformity or most other film properties in evaporation.

More complex combinations interconnect UHV chambers for, perhaps, MBE deposition and surface science analysis, or high vacuum chambers for plasma etching, metal deposition, organic deposition, mask storage, ALD, etc.

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